How is the metallization of photodiode pads constructed ?
The pads on Albis photodiode chips are built from a stack of different metals. On the chip front-side we offer two different stacks. The first stack alternative is optimized for wire-bonding. It consists of an adhesion layer followed by 1.3 µm of pure gold. The second alternative is optimized for soldering. Again it consists of […]
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5 Gb/s GaAs Photodiode
Top-illuminated photodiode chip designed for coupling with 50/125 or 62/125 multimode fibers used in short-wavelength 5 Gb/s datacom applications.
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12 Gb/s Photodiode
Top illuminated photodiode chip for single-mode data and telecom applications up to 12.7 Gb/s.
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12 Gb/s Long Wavelength Photodiode
Top illuminated photodiode chip for single-mode data and telecom applications up to 12 Gb/s.
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56 Gbd Top 40 GHz Lens High Quantum Efficiency 1.5 GHz APD ROSA 2.5 Gb/s 20 GHz DC 28/56 Gbd PX Packaged PD Ultrafast InGaAs PD High Power PD Monitoring and Sensing PD 128 Gbd 850 PM Module 2D Array 5 Gb/s 14 Gb/s 1550 DC Side 112 Gbd 25 Gb/s 1310 Single multi-mode 30 GHz 10 Gb/s Chip on Carrier APD Position Sensing 1 Gb/s single-mode Array 28 Gbd Bottom 12 Gb/s 10 GHz LC receptacle
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