Multi-channel PD50X1 on Carrier
800G Photodiode Array with Integrated Lens
The PS50X4 photodiode array is an assembly of four PD50X1 photodiode chips flip-chip soldered onto a metallized ceramic carrier with coplanar G-S-G contact layout and a channel pitch of 500 µm. All photodiodes are positioned with high accuracy to guarantee a chip-to-chip alignment as low as ± 6 µm. PD50X1 is an ultra high-speed photodiode […]
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800G Photodiode Array with Integrated Lens
Ultra high-speed monolithic 4-channel InGaAs/InP photodiode array specifically designed for 112 Gbaud PAM-4 (400GbE and 800GbE) applications. This scalable array features integrated backside lenses and has a channel pitch of 500 µm. The 1×4 basic cell can be repeated n times to provide scalable arrays of 4, 8, 12 or more individual photodiode channels. It offers an excellent responsivity and […]
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112 Gbaud Photodiode with Integrated Lens
PS50X1 is an assembly of a single 112 Gbaud photodiode chip flip-chip soldered onto a metallized ceramic carrier with coplanar contact layout. The bottom illuminated InGaAs p-i-n photodiode structure with an integrated backside lens is optimized for 112 Gbd PAM-4 (400GbE and 800GbE) single-mode telecom, microwave photonic links, RF over fiber as well as test […]
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800G Photodiode Array with Integrated Lens
The PS60X4 photodiode array is an assembly of four PD60X1 photodiode chips flip-chip soldered onto a metallized ceramic carrier with coplanar G-S-G contact layout and a channel pitch of 750 µm.
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112 Gbaud Photodiode with Integrated Lens
PS60X1 is an assembly of a single 112 Gbaud photodiode chip flip-chip soldered onto a metallized ceramic carrier with coplanar contact layout. The bottom illuminated InGaAs p-i-n photodiode structure with an integrated backside lens is optimized for 112 Gbd PAM-4 (400GbE and 800GbE) single-mode telecom, microwave photonic links, RF over fiber as well as […]
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112 Gbaud Photodiode with Integrated Lens
Ultra high speed InGaAs/InP photodiode chip with an integrated backside lens. The bottom illuminated p-i-n photodiode structure with an integrated backside lens is optimized for 112 Gbd PAM-4 (400GbE and 800GbE) single-mode telecom, microwave photonic links, RF over fiber as well as test and measurement applications. It offers an excellent responsivity and high speed of […]
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