APD00A1 on Carrier
Linear Mode APD
APD00A1 is a backside illuminated, long-wavelength avalanche photodiode chip. Key strengths of this APD are a low excess noise and a high responsivity. The APD is optimized for sensing and LiDAR applications in the wavelength region from 990 up to 1650 nm. The large optical aperture of 180 µm allows easy and efficient optical coupling. The APD chip is […]
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Optical Receiver Module with High Quantum Efficiency Photodiode
PX05G3 is a PD05G1 photodiode chip packaged in a TO-46 header and capped with a flat window TO-cap. The photodiode offers a very low dark current in combination with an excellent responsivity in the wavelength region from 1260 nm to 1620 nm.
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High Quantum Efficiency Photodiode
PD05G1 is a backside illuminated InGaAs/InP photodiode chip featuring a large light sensitive area with a diameter of 90 µm. The p-i-n photodiode structure is optimized for applications requiring high quantum efficiency, but is also suitable for datacom and telecom applications up to 2.5 Gb/s, as well as monitoring, instrumentation, sensing and LiDAR applications. The photodiode […]
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High Quantum Efficiency Photodiode
PD05S1 is a backside illuminated InGaAs/InP photodiode chip featuring a large light sensitive area with a diameter of 120 µm. The p-i-n photodiode structure is optimized for datacom and telecom applications up to 2.5 Gb/s, as well as laser monitoring, sensing, LiDAR and quantum communication applications. The photodiode offers a very low dark current in […]
Read MorePD05J16 on wrap-around Carrier
16-Channel Balanced Photodiode Array
Compact 16-channel monolithic array InGaAs/InP photodiodes with large optical apertures of 120 µm separated by a 300 μm pitch. The backside illuminated photodiode array is flip-chip soldered on a ceramic submount with wrap-around metallization.
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Optical Receiver Module with High Quantum Efficiency Photodiode
PX05S3 is a PD05S1 photodiode chip packaged in a TO-5 header and capped with a flat window TO-cap. The photodiode offers a very low dark current in combination with an excellent responsivity in the wavelength region from 980 nm to 1620 nm.
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Linear Mode APD
APD00A1 is a backside illuminated, long-wavelength avalanche photodiode chip with a large optical aperture of 180 µm. Key strengths of this APD are a low excess noise and a high responsivity. The APD is optimized for sensing and LiDAR applications in the wavelength region from 990 up to 1650 nm. The APD chip has one anode […]
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20 GHz High Power Photodiode on Carrier
High power, high linearity photodiode chip mounted on an AlN carrier. It offers a typical bandwidth of 22 GHz for photocurrents up to 50 mA, a responsivity of 0.5 A/W and high linearity of +30 dBm OIP3 @ 20 GHz, 30 mA.
Read MorePD05J8 on wrap-around Carrier
8-Channel Flip-chip Soldered Balanced Photodiode Array
Monolithic array of eight InGaAs/InP bottom illuminated photodiodes with large optical apertures of 120 µm separated by a 300 μm pitch. The bottom illuminated p-i-n photodiode structures are optimized for low speed monitoring applications in data- and telecom up to 2.5 Gb/s. They offer an excellent responsivity and high speed of response in the wavelength […]
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50G Bottom Illuminated Photodiode
Bottom illuminated photodiode chip for applications up to 50 GHz.
Read MorePD05J4 on wrap-around Carrier
4 Channel Flip-chip Soldered Monitoring Photodiode Array
Monolithic array of four bottom-illuminated photodiode chips with large optical apertures separated by a standard 250 μm pitch.
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5 Gb/s PON Photodiode with Integrated Optical Filter
Bottom illuminated 5 Gb/s InGaAs photodiode with integrated optical thin-film filter.
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Multi-Channel Bottom Illuminated Monitoring Photodiode Array
Bottom illuminated multi-channel 2.5 Gb/s InGaAs photodiode array.
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2.5 Gb/s Bottom Illuminated Photodiode
Bbottom illuminated photodiode chip for single-mode data and telecom applications up to 2.7 Gb/s.
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