PD40C1
56 Gbaud Photodiode with Enhanced Responsivity
Ultra high speed InGaAs/InP photodiode chip optimized for 56 Gbaud PAM-4 (400GBASE-DR4 and 400G-FR4), single-mode telecom and microwave photonic links, RF over fiber as well as test and measurement applications. It offers an excellent responsivity and high speed of response in the wavelength region around 1310 nm. Over the entire wavelength range from 1260 to 1620 nm, a broadband AR coating provides low reflectivity and high return loss.
Features
- Ultra high speed
- Typical bandwidth: 38 GHz
- Typical responsivity: 0.8 A/W @ 1310nm
- G-S-G pad configuration with large pad diameter of 80 µm
- Cost effective, small chip size
Popular Search Terms
Ultrafast InGaAs PD DC Top 112 Gbd 1310 56 Gbd APD ROSA 14 Gb/s 10 Gb/s Single DC High Power PD single-mode 12 Gb/s Position Sensing Lens Monitoring and Sensing PD Chip on Carrier High Quantum Efficiency 1 Gb/s multi-mode LC receptacle PX Packaged PD 20 GHz 850 10 GHz Bottom 128 Gbd 28/56 Gbd 5 Gb/s 2D Array PM Module Side 1.5 GHz APD 25 Gb/s Array 40 GHz 28 Gbd 1550 2.5 Gb/s 30 GHz
Need More Information?