PD00W4
Four-Quadrant Position Sensing PD
PD00W4 is an InGaAs/InP photodiode segmented into four individual quadrants with small separation of only 30 µm. The topside illuminated four-quadrant photodiode features a very large detecting area with 3 mm diameter. The photodiode structure is optimized for position sensing, beam alignment / profiling and optical tracking applications.
The photodiode offers a very low dark current and an excellent responsivity in the wavelength region from 980 nm to 1620 nm. The anode pad metallization is optimized for wire-bonding. The common cathode metallization on the chip backside consists of solderable metal.
Features
- Large active area of 3 mm diameter
- Very small quadrant separation: 30 um
- Very low dark current
- High responsivity: 1.1 A/W
- Solderable common cathode metallization
Popular Search Terms
Bottom Monitoring and Sensing PD 1 Gb/s 10 Gb/s 2D Array DC Single APD ROSA multi-mode 1550 Top single-mode 25 Gb/s 14 Gb/s Side PM Module 28/56 Gbd Ultrafast InGaAs PD 40 GHz 10 GHz Lens 20 GHz 30 GHz 2.5 Gb/s DC 112 Gbd 850 PX Packaged PD 5 Gb/s 1310 28 Gbd LC receptacle 1.5 GHz High Quantum Efficiency 12 Gb/s 56 Gbd High Power PD Array APD Chip on Carrier Position Sensing 128 Gbd
Need More Information?