APD10E1
10 Gb/s Long-Wavelength APD
Top-illuminated, high speed avalanche photodiode chip with a dual pad layout and a large optical aperture. The APD is optimized for various single-mode 10G Gigabit Passive Optical Networks (GPON) applications such as NGPON2. A key feature of this innovative APD is low excess noise, enabling receiver sensitivities of -29 dBm for 10 Gb/s NRZ signals when used with an appropriate TIA.
Features
- Enables a receiver sensitivity of –29 dBm with commercially available TIAs
- High gain-bandwidth product: 90 GHz
- Large optical aperture
- Low operating bias: 29 V
- Low temperature dependence: 25 mV/°C
- Low capacitance: 140 fF
Popular Search Terms
20 GHz 1550 1 Gb/s Side 2D Array 128 Gbd 850 5 Gb/s 56 Gbd 1310 Top Chip on Carrier 40 GHz Position Sensing 14 Gb/s DC LC receptacle 10 Gb/s single-mode 2.5 Gb/s PM Module Single Monitoring and Sensing PD Bottom 28/56 Gbd High Quantum Efficiency 112 Gbd High Power PD APD APD ROSA 25 Gb/s PX Packaged PD Lens 30 GHz 28 Gbd DC 10 GHz 12 Gb/s multi-mode 1.5 GHz Ultrafast InGaAs PD Array
Need More Information?