PD05J16 on wrap-around Carrier
16-Channel Balanced Photodiode Array
Compact monolithic array of 16 InGaAs/InP photodiodes with large optical apertures of 120 µm separated by a 300 μm pitch. The backside illuminated p-i-n photodiode structures are optimized for low speed monitoring applications in data- and telecom up to 2.5 Gb/s. They offer an excellent responsivity and high speed of response in the wavelength region from 1260 nm to 1620 nm.
The backside illuminated 16-channel photodiode array is flip-chip soldered on a ceramic submount with wrap-around metallization. The conductor lines are designed for balanced detection using eight pairs of photodiodes.
Features
- Optimized for balanced detection
- Balanced detection using eight pairs of photodiodes
- Easy optical coupling into large backside optical aperture
- High responsivity: 0.95 A/W @ 1550 nm
- Customized carrier layouts
Popular Search Terms
1.5 GHz Top Chip on Carrier single-mode 10 Gb/s 14 Gb/s 850 APD Monitoring and Sensing PD APD ROSA 2.5 Gb/s Position Sensing High Power PD 20 GHz 28/56 Gbd 12 Gb/s High Quantum Efficiency 1550 LC receptacle 56 Gbd Array 1 Gb/s 5 Gb/s 1310 DC 28 Gbd 30 GHz Side 112 Gbd 25 Gb/s PX Packaged PD Bottom 2D Array multi-mode Ultrafast InGaAs PD 40 GHz 10 GHz 128 Gbd DC Lens Single PM Module
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