PD05J8 on wrap-around Carrier
8-Channel Flip-chip Soldered Balanced Photodiode Array
Monolithic array of eight InGaAs/InP bottom illuminated photodiodes with large optical apertures of 120 µm separated by a 300 μm pitch. The bottom illuminated p-i-n photodiode structures are optimized for low speed monitoring applications in data- and telecom up to 2.5 Gb/s. They offer an excellent responsivity and high speed of response in the wavelength region from 1260 to 1620 nm.
The bottom-illuminated 8 channel photodiode array is flip-chip soldered on a ceramic submount with wrap-around metallization. The conductor lines are designed for balanced detection using four pairs of photodiodes.
Features
- Optimized for laser monitoring
- Balanced detection using four pairs of photodiodes
- Easy optical coupling into large backside optical aperture
- High responsivity: 0.9 A/W
- Customized carrier layouts
Popular Search Terms
Array DC 12 Gb/s 30 GHz Lens 1550 28/56 Gbd 14 Gb/s High Quantum Efficiency Ultrafast InGaAs PD Bottom 850 112 Gbd Top 40 GHz 1 Gb/s Side 1.5 GHz Chip on Carrier PX Packaged PD LC receptacle 28 Gbd multi-mode Single Position Sensing APD ROSA Monitoring and Sensing PD 56 Gbd PM Module 1310 single-mode 128 Gbd APD 2D Array 5 Gb/s 20 GHz 2.5 Gb/s 10 GHz DC 10 Gb/s High Power PD 25 Gb/s
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